1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IGN2729M1500

IGN2729M1500

Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IGN2729M1500 Image

The IGN2729M1500 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 2.9 GHz, Power 61.76 dBm, Power(W) 1.5 W, Duty_Cycle 0.1, Gain 15 dB. Tags: 2-Hole Flanged. More details for IGN2729M1500 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN2729M1500
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.5 W, GaN on SiC HEMT from 2.7 to 2.9 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 2.9 GHz
  • Power
    61.76 dBm
  • Power(W)
    1.5 W
  • Pulsed Width
    100 uS
  • Duty_Cycle
    0.1
  • Gain
    15 dB
  • Input Return Loss
    12 dB
  • VSWR
    2.00:1, 5.00:1
  • Supply Voltage
    100 V
  • Input Power
    60 W
  • Voltage - Drain-Source (Vdss)
    350 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Drain Efficiency
    0.5
  • Drain Current
    54 A
  • Package Type
    2-Hole Flanged
  • RoHS
    Yes
  • Grade
    Space, Commercial
  • Operating Temperature
    -55 to 225 Degreee C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View details on the manufacturer's website
View similar products