The IGN3338CW150 from Integra RF Power Devices is a GaN-on-SiC RF Power Transistor that operates from 3.3 to 3.8 GHz. It delivers a CW output power of more than 150 W with a gain of 10 dB and an efficiency of 47%. This transistor is based on GaN-on-SiC HEMT technology and has pre-matched input and output impedance. It requires a DC supply of 28 V and consumes 80 mA of current. The transistor is available in a metal-based package with an epoxy-sealed ceramic lid. It measures 27.31 x 21.47 x 4.45 mm and is ideal for S-band system applications. It has a 3A001 export qualification.
