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IGN3842M130

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The IGN3842M130 from Integra Technologies, Inc. is a RF Transistor with Frequency 3.8 to 4.2 GHz, Power 51.14 to 52.55 dBm, Power(W) 179.89 W, Duty_Cycle 0.02, Gain 13.8 dB. Tags: Flanged. More details for IGN3842M130 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN3842M130
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3.8 to 4.2 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    C Band, Radar
  • CW/Pulse
    CW
  • Frequency
    3.8 to 4.2 GHz
  • Power
    51.14 to 52.55 dBm
  • Power(W)
    179.89 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.02
  • Gain
    13.8 dB
  • Power Gain (Gp)
    13.3 to 14.8 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.6 V
  • Input Power
    6 W
  • Quiescent Drain Current
    75 to 85 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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