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CGHV31500F1

RF Transistor by MACOM (309 more products)
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The CGHV31500F1 from MACOM is an S-Band GaN HEMT that operates from 2.7 to 3.1 GHz. It delivers a saturated output power of 500 W with a small-signal gain of 14.5 dB and drain efficiency of up to 71%. The transistor is based on Wolfpeed’s high power density 50 V, 0.4 μm GaN on silicon carbide (SiC) manufacturing process. It has been developed with long pulse capability to meet the developing trends in radar architectures. The device has a maximum pulse width of 2000 μS with a duty cycle of 20%. It is available in a ceramic/metal flange package of type 440226 and is ideal for civil and military pulsed radar amplifier applications.

Product Specifications

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Product Details

  • Part Number
    CGHV31500F1
  • Manufacturer
    MACOM
  • Description
    500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Military, Radar, Aerospace & Defence
  • Application
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power
    57 to 57.9 dBm
  • Power(W)
    500 to 616 W
  • Pulsed Width
    2 ms
  • Duty_Cycle
    20 %
  • Small Signal Gain
    14.5 dB
  • Power Gain (Gp)
    11 to 11.9 dB
  • Input Return Loss
    15 dB
  • Supply Voltage
    50 V
  • Input Power
    46 dBm
  • Current
    500 mA
  • Drain Current
    500 mA
  • Power Dissipation (Pdiss)
    418 W
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    4-Hole Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 75 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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