The CGHV38375F from MACOM is a GaN on SiC Amplifier (IM-FET) that operates from 2.75 to 3.75 GHz. It delivers a saturated output power of 400 W with a small signal gain of more than 10 dB and has an efficiency of 55%. This amplifier is based on GaN on SiC FET technology and is suitable as a high-power building block supporting both pulsed and CW radar applications. It requires a supply voltage of 50 V and draws 500 mA of current. The amplifier is matched to 50 ohms at both input and output ports and provides coverage over the entire S-Band radar band. It is available in a flanged package.
