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The MGFK50G3745A from Mitsubishi Electric is a Ku-band GaN High Electron Mobility Transistor (HEMT) designed for satellite earth station applications. It operates from 13.75 to 14.5 GHz and provides a saturated output power of 100 W with a gain of 10 dB. It combines unmatched power output with low third-order intermodulation distortion (IMD3) and an offset frequency of up to 200MHz. The transistor uses optimized transistor matching circuits to deliver 100W peak output power for downsizing SATCOM earth stations.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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