1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Polyfet RF Devices
  6. GX4442

GX4442

Download Datasheet
Request Quote

Note : Your request will be directed to Polyfet RF Devices.

GX4442 Image

The GX4442 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 2.5 GHz, Power 52 dBm, Power(W) 160 W, Power Gain (Gp) 12 dB, VSWR 10.0:1. Tags: Flanged. More details for GX4442 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GX4442
  • Manufacturer
    Polyfet RF Devices
  • Description
    160 W, GaN on SiC HEMT Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Communication
  • Frequency
    1 MHz to 2.5 GHz
  • Power
    52 dBm
  • Power(W)
    160 W
  • Power Gain (Gp)
    12 dB
  • VSWR
    10.0:1
  • Breakdown Voltage - Drain-Source
    250 V
  • Voltage - Drain-Source (Vdss)
    48 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Drain Efficiency
    0.55
  • Drain Bias Current
    8 mA
  • Quiescent Drain Current
    0.6 A
  • Power Dissipation (Pdiss)
    200 W
  • Feedback Capacitance
    1.6 pF
  • Input Capacitance
    26 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    14 pF
  • Thermal Resistance
    1.5 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
View similar products