T1G4012036-FL

RF Transistor by Qorvo (103 more products)

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T1G4012036-FL Image

The T1G4012036-FL from Qorvo is a RF Transistor with Frequency DC to 3.5 GHz, Power 43.8 dBm, Power(W) 23.99 W, Saturated Power 50.8 dBm, Duty_Cycle 0.2. Tags: Flanged. More details for T1G4012036-FL can be seen below.

Product Specifications

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Product Details

  • Part Number
    T1G4012036-FL
  • Manufacturer
    Qorvo
  • Description
    24W, 36V, DC to 3.5 GHz, GaN RF Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement, Broadcast
  • Application
    Military, Communication System, Jammers, Test & Instrumentation, Radio, GPS, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.5 GHz
  • Power
    43.8 dBm
  • Power(W)
    23.99 W
  • Peak Output Power
    120 W
  • Saturated Power
    50.8 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    16 dB
  • Supply Voltage
    36 V
  • Voltage - Gate-Source (Vgs)
    -2.9 V
  • Drain Efficiency
    0.52
  • Quiescent Drain Current
    360 mA
  • Package Type
    Flanged
  • RoHS
    Yes

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