The H005C11D from RFHIC is a GaN-on-SiC Transistor that operates from 1880 to 2025 MHz. It delivers a saturated output power of 170 W with a gain of 17 dB and a drain efficiency of 48%. This transistor uses RFHIC’s OptiGaN GaN-on-SiC technology, enabling customers to derive high efficiency without stretching their budget. It requires a DC supply of 48 V. The transistor is available in a surface-mount package and is ideal for 4G, 4G LTE, and Open RAN applications.
