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H020C12D

RF Transistor by RFHIC | Visit website (83 more products)
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H020C12D Image

The H020C12D from RFHIC is a RF Transistor with Frequency 1930 to 2000 MHz, Power 48.98 dBm, Power(W) 79 W, Saturated Power 398 W, Gain 14.4 dB. Tags: Surface Mount, Flanged. More details for H020C12D can be seen below.

Product Specifications

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Product Details

  • Part Number
    H020C12D
  • Manufacturer
    RFHIC
  • Description
    398 W, GaN on SiC OptiGaN HEMT from 1930 to 2000 MHz for 4G LTE & Open RAN Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wireless Infrastructure, Broadcast, Base Station
  • Application
    4G / LTE, Cellular, Point to Point
  • CW/Pulse
    CW
  • Frequency
    1930 to 2000 MHz
  • Power
    48.98 dBm
  • Power(W)
    79 W
  • Saturated Power
    398 W
  • Gain
    14.4 dB
  • Supply Voltage
    48 V
  • Package Type
    Surface Mount, Flanged
  • Grade
    Commercial
  • Tags
    OptiGaN Series

Technical Documents
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