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H029C12A

RF Transistor by RFHIC | Visit website (83 more products)
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The H029C12A from RFHIC is a RF Transistor with Frequency 2300 to 2400 MHz, Power 46.81 to 54.8 dBm, Power(W) 48 to 302 W, Saturated Power 275 to 302 W, Gain 12.5 to 13.5 dB. Tags: Flanged. More details for H029C12A can be seen below.

Product Specifications

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Product Details

  • Part Number
    H029C12A
  • Manufacturer
    RFHIC
  • Description
    GaN on SiC HEMT from 2300 to 2400 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMax, 4G / LTE, 3G / WCDMA, GSM, Cellular
  • CW/Pulse
    Pulse
  • Frequency
    2300 to 2400 MHz
  • Power
    46.81 to 54.8 dBm
  • Power(W)
    48 to 302 W
  • Peak Output Power
    313.3 to 323.6 W
  • Saturated Power
    275 to 302 W
  • Gain
    12.5 to 13.5 dB
  • VSWR
    10:1
  • Supply Voltage
    55 V
  • Threshold Voltage
    -3.775 to -2.525 V
  • Breakdown Voltage
    150 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10, +2 V
  • Drain Current
    6.4 to 21.6 A
  • Drain Leakage Current (Id)
    2.3 to 8.64 mA
  • Gate Leakage Current (Ig)
    -6.7 to -1 mA
  • Power Dissipation (Pdiss)
    80 to 88.8 W
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    250 Degree C
  • Package Type
    Flanged
  • Package
    RF18010DKR3
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    LTE Linearity : -24 to -22 dBc

Technical Documents
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