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LET9045F

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The LET9045F from STMicroelectronics is a RF Transistor with Frequency 920 to 960 MHz, Power 47.7 dBm, Power(W) 45 to 59 W, Power Gain (Gp) 16.5 to 17.7 dB, Efficiency 60 to 65%. More details for LET9045F can be seen below.

Product Specifications

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Product Details

  • Part Number
    LET9045F
  • Manufacturer
    STMicroelectronics
  • Description
    59 W, LDMOS / MOSFET RF Transistor from 920 to 960 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Commercial, Wireless Infrastructure
  • Application
    Commercial, Industrial
  • CW/Pulse
    CW
  • Frequency
    920 to 960 MHz
  • Power
    47.7 dBm
  • Power(W)
    45 to 59 W
  • Power Gain (Gp)
    16.5 to 17.7 dB
  • Efficiency
    60 to 65%
  • VSWR
    10.00:1
  • Supply Voltage
    28 to 36 V
  • Breakdown Voltage - Drain-Source
    80 V
  • Voltage - Drain-Source (Vdss)
    80 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 15 V
  • Current
    300 mA
  • Drain Current
    9 A
  • Drain Leakage Current (Id)
    1 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    108 W
  • Feedback Capacitance
    0.8 pF
  • Input Capacitance
    58 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    29 pF
  • Thermal Resistance
    1.2 Degree C/W
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
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