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PD85006-E

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PD85006-E Image

The PD85006-E from STMicroelectronics is a RF Transistor with Frequency 860 to 960 MHz, Power 37.78 dBm, Power(W) 5 to 6 W, Power Gain (Gp) 15 to 17 dB, Efficiency 55 to 63%. Tags: Surface Mount. More details for PD85006-E can be seen below.

Product Specifications

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Product Details

  • Part Number
    PD85006-E
  • Manufacturer
    STMicroelectronics
  • Description
    6 W, LDMOS / MOSFET RF Transistor from 860 to 960 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, Commercial, Wireless Infrastructure
  • Application
    Commercial, Industrial, Radio
  • CW/Pulse
    CW
  • Frequency
    860 to 960 MHz
  • Power
    37.78 dBm
  • Power(W)
    5 to 6 W
  • Power Gain (Gp)
    15 to 17 dB
  • Efficiency
    55 to 63%
  • VSWR
    20.00:1
  • Supply Voltage
    13.6 V
  • Voltage - Drain-Source (Vdss)
    40 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 15 V
  • Current
    200 mA
  • Drain Current
    2 A
  • Drain Leakage Current (Id)
    1 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    36.5 W
  • Feedback Capacitance
    1.1 pF
  • Input Capacitance
    16 pF
  • Junction Temperature (Tj)
    165 Degree C
  • Output Capacitance
    14 pF
  • Thermal Resistance
    2.6 Degree C/W
  • Package Type
    Surface Mount
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
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