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RF2L16180CB4

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The RF2L16180CB4 from STMicroelectronics is a RF Transistor with Frequency 1.3 to 1.6 GHz, Power 52.553 dBm, Power(W) 180 W, Power Gain (Gp) 14 dB, Supply Voltage 28 V. Tags: Flanged. More details for RF2L16180CB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF2L16180CB4
  • Manufacturer
    STMicroelectronics
  • Description
    180 W, LDMOS RF Transistor from 1.3 to 1.6 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Wireless Infrastructure
  • Application
    Industrial, Scientific, medical, Base Station, 3G / WCDMA, PCS, 4G / LTE, Cellular, ISM Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    1.3 to 1.6 GHz
  • Power
    52.553 dBm
  • Power(W)
    180 W
  • Power Gain (Gp)
    14 dB
  • Class
    Class C
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 2.5 V
  • Drain Gate Voltage
    1.5
  • Breakdown Voltage - Drain-Source
    65 V
  • Drain Efficiency
    0.6
  • Drain Bias Current
    2.5
  • Gate Leakage Current (Ig)
    ±100 nA
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Flanged
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series

Technical Documents
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