The CHK8101-SYC from United Monolithic Semiconductors is an Unmatched High Electron Mobility Transistor (HEMT) that operates from DC to 6 GHz. It delivers an output power of more than 15 W with a small signal gain of 19 dB and power added efficiency of 64%. The transistor is developed using 0.5 µm gate length GaN HEMT technology and requires external matching circuitry. It is designed to work in both pulsed and CW operating modes and offers both general purpose and broadband solutions for a variety of RF power applications. The HEMT requires a DC bias of 50 V and consumes 100 mA of current. It is available in a hermetically-sealed ceramic-metal flange package and is suitable for use in radar and telecommunications applications.
