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WP286P25020MH(S)

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)
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WP286P25020MH(S) Image

The WP286P25020MH(S) from WAVEPIA Co,. Ltd. is a RF Transistor with Frequency 5.8 to 6.7 GHz, Power 43.5 dBm, Power(W) 22.39 W, Saturated Power 22.18 W, Small Signal Gain 11.6 dB. Tags: Flanged. More details for WP286P25020MH(S) can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP286P25020MH(S)
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    22.18 W, GaN HEMT Transistor from 5.8 to 6.7 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Test & Measurement, Radar, Wireless Infrastructure
  • Application
    Cellular, Radar
  • CW/Pulse
    CW
  • Frequency
    5.8 to 6.7 GHz
  • Power
    43.5 dBm
  • Power(W)
    22.39 W
  • Saturated Power
    22.18 W
  • Small Signal Gain
    11.6 dB
  • Power Gain (Gp)
    8.46 dB
  • Power Added Effeciency
    32%
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.5 V (Gate)
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    0.4091
  • Drain Current
    1000 mA (Saturated)
  • Quiescent Drain Current
    190 mA
  • Package Type
    Flanged
  • Package
    680B
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : '-2.33 V

Technical Documents
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