|
Top stories this week. View it in your browser
|
Sponsored by NXP Semiconductors |
|
|
| |
| New White Papers & Articles |
|
|
|
Sponsored by NXP Semiconductors |
| NXP Expands 5G RF Integrated Solutions Portfolio |
| NXP expands its multi-chip module (MCM) portfolio with the latest, high efficiency LDMOS technology that has pin compatibility with previous generation products. Our portfolio of RF power MCMs meet performance, size and weight requirements for building 5G mMIMO networks, outdoor small cells and low power remote radio heads. Click here to learn more. |
|
|
| |
| Featured Products this Week |
|
| Mid and High Band Front-End Module for 3G/4G/5G Applications |
Front End Module
from Skyworks Solutions
|
| The SKY5-8085-11 from Skyworks is a Mid and High-Band Front-End Module for 3G/4G/5G mobile devices, data cards, M2M, and LTE advanced carrier aggregation applications. It incorporates separate 3G / 4G / 5G power amplifier blocks operating in the mid and high bands, a silicon controller containing the MIPI RFFE interface, RF band switches, mid and high-band antenna switches, bi-directional couplers, and integrated filters for 1, 2, 3, 7, 34, 39, 40 and 41 bands. |
|
Download Datasheet |
Product Details
|
|
|
|
|
| 300 W GaN on Si HEMT Amplifier from DC to 2.7 GHz |
RF Amplifier
from MACOM
|
| The MAGX-100027-300C0P from MACOM is a GaN on Si HEMT Amplifier that operates from DC to 2.7 GHz. It provides an output power of 300 W (54.8 dBm) with a gain of 13.5 dB and has a PAE of 65.3%. This amplifier supports both CW and pulsed operations. It is ideally suited for military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation, and radar applications. |
|
Download Datasheet |
Product Details
|
|
|
|
|
| 3-Stage LDMOS Integrated Doherty MMIC from 3400 to 3800 MHz |
RF Transistor
from Ampleon
|
| The BLM10D3438-35AB from Ampleon is a 3-Stage LDMOS Integrated Doherty MMIC that operates from 3400 to 3800 MHz. This device delivers an output power of 5 watts with a power gain of 33 dB and an efficiency of 41% while operating at a supply voltage of 26 V. The carrier and peaking device, input splitter, output combiner, and pre-match are integrated into a single package, along with an ESD protection circuit. The amplifier is available in a PQFN20 package and is well suited as a final stage amplifier for small cells, massive MIMO systems, and for multi-carrier 5G base stations. |
|
Download Datasheet |
Product Details
|
|
|
|
|
Sponsored by NXP Semiconductors |
|
|
| |
|
| Dual Loop PLDRO from 5 to 13 GHz |
PLDRO
from Polaris
|
| The Dual Loop PLDRO from Polaris is a Phase Locked Dielectric Resonator Oscillators (PLDRO) with an output frequency from5 to 13 GHz. It has a frequency resolution of 500 kHz and provides an output power of +13 dBm. The PLDRO has its phase-locked to an integer or fractional multiple of the external reference using a PLCRO (Phase Locked Coaxial Resonator Oscillator) and frequency divider. |
|
Download Datasheet |
Product Details
|
|
|
|
| | About everything RF | | everything RF keeps users up to date with the RF & Microwave Industry. We provide the latest news, information on new product releases, upcoming events, white papers, articles and much more. |
|
| To unsubscribe please click here | [Sender_Name]
[Sender_Address], [Sender_City], [Sender_State], [Sender_Zip] |
|
