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IDM165L650

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The IDM165L650 from Integra Technologies, Inc. is a RF Transistor with Frequency 125 to 167 MHz, Power 58.13 dBm, Power(W) 650.13 W, Duty_Cycle 0.2, Gain 9.2 dB. Tags: Flanged. More details for IDM165L650 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IDM165L650
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    125 to 167 MHz, 9.2 dB VDMOS Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    VHF
  • CW/Pulse
    CW
  • Frequency
    125 to 167 MHz
  • Power
    58.13 dBm
  • Power(W)
    650.13 W
  • Peak Output Power
    650 W
  • Pulsed Width
    1 ms
  • Duty_Cycle
    0.2
  • Gain
    9.2 dB
  • Power Gain (Gp)
    9.1 dB
  • Supply Voltage
    34 V
  • Threshold Voltage
    1 to 2 V
  • Breakdown Voltage - Drain-Source
    80 V
  • Drain Efficiency
    0.4
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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