The IGN2731L200 from Integra Technologies is a GaN HEMT transistor for S-Band radar applications that oeprates from 2.7 to 3.1 GHz. It delivers an output power of up to 200 Watts with a gain of 14 dB with a drain efficiency of up to 75%. The transistor is avaialble in a chip-wire bond package that measures 34.04 mm x 9.78 mm.
