The CG2H80045D from MACOM is a GaN High Electron Mobility Transistor that operates from DC to 8 GHz. It provides a saturated output power of 45 Watts with a gain of 15 dB @ 4 GHz and a drain efficiency of 65%. The transistor requires a 28 V power supply. It is available as a die and is ideal for use in 2-Way private radios, broadband amplifiers, cellular infrastructure, Class A, AB, Linear amplifiers and test instrument applications.
