The MwT-7F from MicroWave Technology is a GaAs-based RF Transistor that operates from 500 MHz to 26 GHz. It provides a P1dB of 21 dBm with a gain of 14 dB and a power-added efficiency (PAE) of 35 %. The transistor has a noise figure of 2 dB. This MESFET or metal-semiconductor field-effect transistor has a nominal gate length of 0.25 microns and a gate width of 250 microns which makes it suitable for applications requiring high-gain and medium linear power. It is available as a SiN-passivated die that measures 365 x 250 x 100 um. The MwT-7F is suitable for use in commercial, military, and high-reliability space applications.
