RF Transistors - Page 121

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:44.77 dBm (30 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
32 V
Package:
SOT1135B
more info
A3G35H100-04S Image
Description:3400 to 3600 MHz, 14 W AVG., 48 V, AIRFAST RF Power GaN Transistor
Application Industry:
Wireless Infrastructure
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3.4 to 3.6 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Supply Voltage:
48 Vdc
more info
Description:1030 to 1090 MHz, 9.8 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
9.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 7.2 GHz
Power:
38 to 39 dBm
Package Type:
Flanged
Power(W):
6.31 to 7.94 W
Package:
IA
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
250 V
Package:
TO-247CS
more info
Description:2.5 to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.5 to 2.7 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
23 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
849.18 W
Gain:
7.8 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
53.52 to 61.46 dBm
Package Type:
Surface Mount
Power(W):
1399.59 W
Supply Voltage:
50 V
Package:
SOT539B
more info
MMRF1008H Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.39 dBm
Package Type:
Flanged
Power(W):
27.48 W
Supply Voltage:
50 V
Package:
NI--780H--2L
more info
Description:2700 to 3100 MHz, 9.7 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
9.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info

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