RF Transistors - Page 120

2357 RF Transistors from 26 Manufacturers meet your specification.
QPD1425L Image
Description:300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
Application Industry:
Radar, Military, Broadcast, Communication, Test & ...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1200 to 1400 MHz
Power:
55 dBm (Psat)
Package Type:
2-Hole Flanged
Power(W):
300 W (Psat)
Supply Voltage:
65 V
more info
Description:2 Watt, GaN on Silicon Transistor from 10 MHz to 2700 MHz
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description:53.8 dBm (240 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT1252-1
more info
AFT05MS004N Image
Description:Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
36.02 dBm
Package Type:
Surface Mount
Power(W):
4 W
Supply Voltage:
7.5 V
Package:
SOT--89
more info
Description:GaAs FET from 6.4 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 GHz
Power:
32.5 to 34 dBm
Package Type:
Flanged
Power(W):
1.78 to 2.51 W
Package:
MH
more info
Description:120.23 W, GaN HEMT Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
50.8 dBm
Package Type:
Flanged
Power(W):
120.23 W
Gain:
10.1 dB
Supply Voltage:
48 V
more info
Description:200 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
53 dBm
Package Type:
Flanged
Power(W):
200 W
more info
Description:1200 Watts, 50 Volts, 32us, 2% L-Band Avionics 1030/1090 MHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60.79 dBm
Package Type:
Flanged
Power(W):
1199.5 W
Supply Voltage:
50 V
Package:
55-Q03
more info
Description:11 Watt, GaN Power Transistor from 0.03 GHz to 3 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 3 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Gain:
17 dB
Supply Voltage:
32 V
Package:
3 x 3 mm
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
13 to 18 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info

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