RF Transistors - Page 118

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1 to 4 GHz, 40.4 to 41 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Gain:
24.7 dB
Supply Voltage:
12 to 60 V
Package:
3 x 3 mm
more info
Description:890 W GaN on SiC HEMT from 960 to 1215 MHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
960 to 1215 MHz
Power:
58.45 dBm
Package Type:
Flanged
Power(W):
700 W
Gain:
20 dB
Supply Voltage:
50 V
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 700 to 1000 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
32 V
Package:
SOT502B
more info
MMRF5017HS Image
Description:125 W RF Power GaN Transistor from 30 to 2200 MHz
Application Industry:
Radar, Aerospace & Defence, Military, Test & Measu...
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
30 to 2200 MHz
Power:
51 dBm CW, 200 W Pulsed
Package Type:
Flanged
Power(W):
125 W CW, 200 W Pulsed
Supply Voltage:
50 V
more info
Description:GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.94 to 55.56 dBm
Package Type:
Surface Mount
Power(W):
312.1 to 360 W
Gain:
11.4 to 12.6 dB
Supply Voltage:
52 Vdc
more info
Description:175000 to 200000 MHz, 15.43 dB MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1 to 200 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
14.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 12.7 to 13.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.7 to 13.2 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
more info
Description:15 W, GaN HEMT Transistor from DC to 15 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
28 V
more info
Description:10 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
36 V
Package:
55CR
more info

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