RF Transistors - Page 118

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Wireless Infrastructur...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
41.2 dBm
Package Type:
Die
Power(W):
13.18 W
Gain:
18.2 dB
Supply Voltage:
32 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
48.75 dBm
Package Type:
Flanged
Power(W):
74.99 W
Gain:
9 dB
Supply Voltage:
45 V
Package:
Flange Ceramic
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 1.805 to 1.88 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.805 to 1.88 GHz
Power:
38.5 to 39.6 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 9.12 W
Supply Voltage:
28 V
more info
AFT09MP055N Image
Description:Airfast Broadband RF Power LDMOS Transistor, 764-941 MHz, 55 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
764 to 941 MHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Supply Voltage:
12.5 V
Package:
TO--270WB--4
more info
IE21330D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.5 dBm
Package Type:
Flanged
Power(W):
354.81 W
Gain:
14.8 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
45.8 dBm
Package Type:
Flanged
Power(W):
38.02 W
Supply Voltage:
50 V
more info
Description:60 W, GaN HEMT Transistor from DC to 15 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
47.78 dBm
Package Type:
Die
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:300 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 350 MHz
Power:
54 dBm
Package Type:
Flanged
Power(W):
300 W
more info
Description:RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 40 MHz
Power:
58.75 dBm
Package Type:
Die
Power(W):
749.89 W
Supply Voltage:
250 V
Package:
T1
more info

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