RF Transistors - Page 117

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Wireless Infrastructur...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
44.5 dBm
Package Type:
Die
Power(W):
28.18 W
Gain:
19.6 dB
Supply Voltage:
32 V
more info
Description:130 W GaN HEMT from 8.4 to 9.6 GHz for X-Band Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
8.4 to 9.6 GHz
Power:
51.85 to 52.65 dBm
Package Type:
4-Hole Flanged
Power(W):
153 to 184 W (Website says 130 W, datasheet says 1...
Gain:
7.8 to 8.7 dB (Power), 11.8 to 13.8 dB (Linear)
Supply Voltage:
40 V
more info
Description:A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 128 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT1214A
more info
AFT09MS015N Image
Description:Wideband RF Power LDMOS Transistor, 136-941 MHz, 16 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
42.04 dBm
Package Type:
Surface Mount
Power(W):
16 W
Supply Voltage:
12.5 V
Package:
PLD--1.5W
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Gain:
14.2 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:2700 to 2900 MHz, 9.3 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
9.3 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.7 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.7 GHz
Power:
45.5 to 46.5 dBm
Package Type:
Flanged
Power(W):
35.48 to 44.66 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description:15 W, GaN HEMT Transistor from DC to 15 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
28 V
more info
Description:50 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
50 W
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.5 GHz
Package Type:
Through Hole
Gain:
11.7 to 13.5 dB
Supply Voltage:
25 V
Package:
TO-39
more info

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