RF Transistors - Page 122

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Package:
IA
more info
Description:100 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:270 Watts, 50 Volts, 200 us, 10% S-Band Radar 2700 - 2900 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.31 to 54.62 dBm
Package Type:
Die
Power(W):
289.73 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
48.6 dBm
Package Type:
Die
Power(W):
72.44 W
Gain:
19.2 dB
Supply Voltage:
32 V
more info
Description:15 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
28 V
more info
Description:750 Watts LDMOS Power Transistor from DC to 1300 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.3 GHz
Power:
58.75 dBm
Package Type:
Flanged
Power(W):
750 W
Gain:
19 dB
Supply Voltage:
50 V
more info
MRF24300N Image
Description:320 Watt RF Power LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
Broadcast, ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
54.15 to 55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Supply Voltage:
32 V
Package:
OM--780--2L PLASTIC
more info
Description:135 Watts GaN on SiC Transistor for S-Band Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
51.3 dBm
Package Type:
Flanged
Power(W):
134.9 W
Gain:
13.5 dB
Supply Voltage:
46 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 900 MHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
900 MHz
Power:
49.5 dBm
Package Type:
Flanged
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description:13 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
41 dBm
Package Type:
Surface Mount
Power(W):
13 W
more info

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