RF Transistors - Page 122

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 5.3 to 5.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.3 to 5.9 GHz
Power:
45 to 45.5 dBm
Package Type:
Flanged
Power(W):
31.62 to 35.48 W
Package:
IK
more info
Description:175 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
175 W
more info
Description:RF POWER MOSFET FULL-BRIDGE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 40 MHz
Power:
58.75 dBm
Package Type:
Die
Power(W):
749.89 W
Supply Voltage:
400 V
Package:
T1
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
48.6 dBm
Package Type:
Die
Power(W):
72.44 W
Gain:
19.2 dB
Supply Voltage:
32 V
more info
Description:90-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
500 MHz to 2.5 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
28 V
more info
Description:46.02 dBm (40 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1211-2
more info
MRF1511N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 8 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
175 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info
Description:L-Band Radar GaN on SiC Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
more info
Description:GaAs FET from 5.0 to 5.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.0 to 5.3 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IK
more info
Description:45 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info

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