RF Transistors - Page 125

2357 RF Transistors from 26 Manufacturers meet your specification.
MRF6VP11KH Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-150 MHz, 1000 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 150 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
CASE 375D--05 STYLE 1 NI--1230--4
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
58.13 to 59.29 dBm
Package Type:
Flanged
Power(W):
849.18 W
Gain:
12.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IA
more info
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
30 W
more info
Description:5.0 Watts, 12.5 Volts, Class C UHF Applications
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
DC to 512 MHz
Power:
36.99 dBm
Package Type:
Screw Mount, Flanged
Power(W):
5 W
Supply Voltage:
12.5 V
Package:
M123
more info
Description:DC to 20 GHz, pHEMT Transistor
Application Industry:
Aerospace & Defence, Test & Measurement
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Power:
29.5 dBm
Package Type:
Die
Power(W):
0.89 W
Gain:
11.5 dB
Supply Voltage:
8 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 400 MHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
16 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
BLP8G27-5 Image
Description:36.99 dBm (5 W), LDMOS Transistor from 700 to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 2.7 GHz
Power:
36.98 dBm
Package Type:
Surface Mount
Power(W):
4.99 W
Supply Voltage:
28 V
Package:
SOT1371-1
more info
AFT05MS003N Image
Description:Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 941 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
7.5V
Package:
SOT--89
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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