RF Transistors - Page 123

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:270 Watts, 50 Volts, 200 us, 10% S-Band Radar 2700 - 2900 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.31 to 54.62 dBm
Package Type:
Die
Power(W):
289.73 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
47.6 dBm
Package Type:
Die
Power(W):
57.54 W
Gain:
19.3 dB
Supply Voltage:
32 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
36.53 dBm
Package Type:
Flanged
Power(W):
4.5 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:10 W LDMOS Power Transistor from 3 MHz to 2700 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT1371-1
more info
A2I25D012N Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
33.42 dBm
Package Type:
Flanged
Power(W):
2.2 W
Supply Voltage:
28 V
Package:
TO--270WB--15 PLASTIC
more info
Description:850 W GaN-on-SiC Power Transistor from 400 to 450 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
400 to 450 MHz
Power:
59.29 to 60.61 dBm
Package Type:
Flanged
Power(W):
850 to 1150 W
Gain:
19.8 to 21.8 dB
Supply Voltage:
50 V
Package:
Ceramic lid
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
46.5 dBm
Package Type:
Flanged
Power(W):
44.67 W
Supply Voltage:
50 V
more info
Description:35 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info
Description:5 Watts - 28 Volts, Class C Microwave 3000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 3 GHz
Power:
36.99 dBm
Package Type:
2-Hole Flanged
Power(W):
5 W
Supply Voltage:
28 V
Package:
55BT-1
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
46.4 dBm
Package Type:
Die
Power(W):
43.65 W
Gain:
19.2 dB
Supply Voltage:
32 V
more info

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