RF Transistors - Page 123

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.4 GHz
Package Type:
Through Hole
Supply Voltage:
6 V
Package:
TO-72
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
47.6 dBm
Package Type:
Die
Power(W):
57.54 W
Gain:
19.3 dB
Supply Voltage:
32 V
more info
Description:10 MHz to 2.7 GHz, GaN on Si HEMT for RF Energy, Aerospace & Defence Application
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description:1600 W LDMOS Power Transistor from 1 to 450 MHz
Application Industry:
Broadcast, ISM, Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 450 MHz
Power:
62.04 dBm
Package Type:
Flanged
Power(W):
1599.56 W
Supply Voltage:
50 to 55 V
more info
A2T18S160W31S Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-1995 MHz, 32 W AVG. 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.99 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
NI--780S--2L2LA
more info
Description:2900 to 3100 MHz, 8.7 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.1 GHz
Power:
51.9 to 53.52 dBm
Package Type:
Flanged
Power(W):
224.91 W
Gain:
8.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 13.75 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
13.75 to 14.5 GHz
Power:
34 to 35 dBm
Package Type:
Flanged
Power(W):
2.51 to 3.16 W
more info
Description:10 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 40 MHz
Power:
58.75 dBm
Package Type:
Die
Power(W):
749.89 W
Supply Voltage:
125 V
Package:
T1
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
46.4 dBm
Package Type:
Die
Power(W):
43.65 W
Gain:
19.2 dB
Supply Voltage:
32 V
more info

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