RF Transistors - Page 126

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 5.0 to 5.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.0 to 5.3 GHz
Power:
45.5 dBm
Package Type:
Flanged
Power(W):
35.48 W
Package:
IB
more info
Description:110 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
110 W
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
51.76 dBm
Package Type:
Screw Mount, Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M164
more info
Description:DC to 20 GHz, pHEMT Transistor
Application Industry:
Aerospace & Defence, Test & Measurement
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Power:
29.5 dBm
Package Type:
Die
Power(W):
0.89 W
Gain:
11.5 dB
Supply Voltage:
8 V
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
17 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:2 kW CW/Pulsed LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Broadcast, Communication, ISM, Radar, Wireless Inf...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Power:
63 dBm
Package Type:
Earless Flanged
Supply Voltage:
65 V
more info
MRFX1K80H Image
Description:65 V LDMOS Transistor from 1.8 to 400 MHz
Application Industry:
ISM, Aerospace & Defence, Radar, Wireless Infrastr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 400 MHz
Power:
62.55 dBm
Package Type:
Flanged
Power(W):
1800 W
Supply Voltage:
65 V
Package:
NI-1230H-4S
more info
Description:3000 MHz, 9.5 dB Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Gain:
9.4 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
20.5 to 21.5 dBm
Package Type:
Ceramic
Power(W):
0.11 to 0.14 W
more info
Description:10 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info

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