RF Transistors - Page 128

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
9.1 dB
Supply Voltage:
65 V
Package:
Flange Ceramic
more info
Description:56.02 dBm (400 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
32 V
Package:
SOT1258-3
more info
MHT1003N Image
Description:RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 250 W, 32 V
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.45 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Supply Voltage:
32 V
Package:
OM--780--2L PLASTIC
more info
Description:1030 MHz, 10.2 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
56.72 to 58.22 dBm
Package Type:
Flanged
Power(W):
663.74 W
Gain:
10.2 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:GaAs FET from 3.1 to 3.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.1 to 3.5 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info
Description:5 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
36 dBm
Package Type:
Surface Mount
Power(W):
5 W
more info
Description:150 Watts, 36 Volts, 5 ms, 20% Radar 1200 to 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
36 V
Package:
55ST-1
more info
Description:36 dBm, GaN SiC HEMT Transistor from DC to 25 GHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 25 GHz
Power:
36.02 dBm
Package Type:
Die
Power(W):
4 W
Gain:
16 dB
Supply Voltage:
12 to 29.5 V
Package:
0.52 x 0.55 x 0.10 mm
more info
Description:180-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 2.5 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Supply Voltage:
28 V
more info
BLA9G1011L-300 Image
Description:300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Application Industry:
Aerospace & Defence, RF Energy, Avionics, Wireless...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.01 dBm
Package Type:
Surface Mount
Power(W):
316.96 W
Supply Voltage:
32 V
Package:
SOT502A
more info

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