RF Transistors - Page 128

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN-on-SiC HEMT from 3.4 to 4.1 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 4.1 GHz
Power:
53.71 dBm
Package Type:
Flanged
Power(W):
235 W (P3dB)
Gain:
10 to 11.5 dB
Supply Voltage:
48 V
more info
Description:51.76 dBm (150 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.6 to 2.7 GHz
Power:
51.76 dBm
Package Type:
Surface Mount
Power(W):
149.97 W
Supply Voltage:
28 V
Package:
SOT1244B
more info
A2V09H525-04N Image
Description:120 W RF Power LDMOS Transistor from 720 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
720 to 960 MHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
120 w
Gain:
18.9 dB
Supply Voltage:
48 V
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
40 to 42.3 dBm
Package Type:
Flanged
Power(W):
16.98 W
Gain:
15 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 5.3 to 5.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.3 to 5.9 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IK
more info
Description:35 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info
Description:RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
36.02 dBm
Package Type:
Through Hole
Power(W):
4 W
Supply Voltage:
12.5 V
Package:
TO-39
more info
Description:36 dBm, GaN SiC HEMT Transistor from DC to 25 GHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 25 GHz
Power:
36.99 dBm
Package Type:
Die
Power(W):
5 W
Gain:
16 dB
Supply Voltage:
12 to 29.5 V
Package:
0.60 x 0.55 x 0.10 mm
more info
Description:Radar Pulsed Power Transistor
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
55.8 dBm
Package Type:
Flanged
Power(W):
380.19 W
Gain:
8.8 dB
Supply Voltage:
44 V
Package:
Flange Ceramic
more info
Description:1.8 to 2 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
46.5 dBm
Package Type:
Surface Mount
Power(W):
44.67 W
Supply Voltage:
28 V
Package:
SOT608B
more info

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