RF Transistors - Page 129

2357 RF Transistors from 26 Manufacturers meet your specification.
MRFX1K80H Image
Description:65 V LDMOS Transistor from 1.8 to 400 MHz
Application Industry:
ISM, Aerospace & Defence, Radar, Wireless Infrastr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 400 MHz
Power:
62.55 dBm
Package Type:
Flanged
Power(W):
1800 W
Supply Voltage:
65 V
Package:
NI-1230H-4S
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
60 to 61.14 dBm
Package Type:
Flanged
Power(W):
1300.17 W
Gain:
13.9 dB
Supply Voltage:
65 V
Package:
Ceramic
more info
Description:GaAs FET from 5.3 to 5.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.3 to 5.9 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IB
more info
Description:20 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
28 V
Package:
M168
more info
Description:36 dBm, GaN SiC HEMT Transistor from DC to 25 GHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 25 GHz
Power:
36.99 dBm
Package Type:
Die
Power(W):
5 W
Gain:
16 dB
Supply Voltage:
12 to 29.5 V
Package:
0.60 x 0.55 x 0.10 mm
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
8.5 dB
Supply Voltage:
40 V
Package:
Flange Ceramic
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.3 to 2.7 GHz
Power:
44 to 44.8 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
25.12 to 30.2 W
Supply Voltage:
28 V
more info
MHT1002N Image
Description:RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
915 MHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Supply Voltage:
48 V
Package:
OM--780--4L PLASTIC
more info
Description:870 to 990 MHz, 8.1 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
870 to 990 MHz
Power:
53.22 dBm
Package Type:
Flanged
Power(W):
209.89 W
Gain:
8.1 dB
Supply Voltage:
36 V
Package:
Ceramic
more info

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