RF Transistors - Page 129

2360 RF Transistors from 26 Manufacturers meet your specification.
MMRF1305H Image
Description:Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--780H--4L
more info
Description:1.025 to 1.150 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 4.4 to 5.0 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
4.4 to 5.0 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info
Description:300 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
54 dBm
Package Type:
Flanged
Power(W):
300 W
more info
Description:700 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
58.45 dBm
Package Type:
Ceramic
Power(W):
700 W
Supply Voltage:
50 V
more info
Description:36 dBm, GaN SiC HEMT Transistor from DC to 25 GHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 25 GHz
Power:
36.02 dBm
Package Type:
Die
Power(W):
4 W
Gain:
16 dB
Supply Voltage:
12 to 29.5 V
Package:
0.52 x 0.55 x 0.10 mm
more info
Description:450 W RF GaN on SiC HEMT from 3.6 to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3600 to 3700 MHz
Power:
56.53 dBm
Package Type:
Flanged
Power(W):
450 W
Gain:
11.5 dB
Supply Voltage:
50 V
more info
Description:DC to 3.5 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
50 V
Package:
SOT1228A
more info
AFT05MS031N Image
Description:Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 520 MHz
Power:
44.91 dBm
Package Type:
Flanged
Power(W):
30.97 W
Supply Voltage:
13.6 V
Package:
TO--270--2 PLASTIC
more info
Description:1.03 to 1.09 GHz L-Band GaN Transistor for Avionics
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
60.79 dBm
Package Type:
Flanged
Power(W):
1199.5 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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