RF Transistors - Page 130

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
27.5 to 28.5 dBm
Package Type:
Chip
Power(W):
0.56 to 0.71 W
more info
Description:20 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:800 Watts - 54 Volts, 20us, 6% 1025-1150 MHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
59.03 to 59.16 dBm
Package Type:
Die
Power(W):
824.14 W
Supply Voltage:
54 V
Package:
55-KR
more info
Description:40 dBm, GaN SiC HEMT Transistor from DC to 25 GHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 25 GHz
Power:
40 dBm
Package Type:
Die
Power(W):
10 W
Gain:
16 dB
Supply Voltage:
12 to 29.5 V
Package:
0.98 x 0.55 x 0.10 mm
more info
Description:5 W GaN Power Transistor from DC to 6 GHz
Application Industry:
Radar, Military, Wireless Infrastructure, Broadcas...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
37 dBm (Psat)
Package Type:
Surface Mount
Power(W):
5 W (Psat)
Supply Voltage:
28 V
Package:
SOIC Plastic Package
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
28 V
Package:
SOT502B
more info
AFM907N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 136-941 MHz, 7 W, 7.5 V WIDEBAND
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
Package:
DFN 4 x 6
more info
Description:2700 to 2900 MHz, 11 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
11 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN from 9.2 to 9.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
9.2 to 9.5 GHz
Power:
46.4 dBm
Package Type:
Surface Mount
Power(W):
43.7 W
Gain:
21.4 dB
more info
Description:80 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
80 W
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type