RF Transistors - Page 131

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
36.02 dBm
Package Type:
Through Hole
Power(W):
4 W
Supply Voltage:
12.5 V
Package:
TO-39
more info
Description:41 dBm, GaN SiC HEMT Transistor from DC to 25 GHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 25 GHz
Power:
41.46 dBm
Package Type:
Die
Power(W):
14 W
Gain:
14 dB
Supply Voltage:
12 to 29.5 V
Package:
1.46 x 0.55 x 0.10 mm
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
9.5 to 10 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:49.54 dBm (90 W), LDMOS Transistor from 1427 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.42 to 2.17 GHz
Power:
49.54 dBm
Package Type:
Surface Mount
Power(W):
89.95 W
Supply Voltage:
28 V
Package:
SOT1121A
more info
MMRF1312GS Image
Description:RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
900 MHz to 1.215 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
52 V
Package:
NI--1230GS--4L
more info
Description:1025 to 1150 MHz, 16.85 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
56.99 to 58.99 dBm
Package Type:
Flanged
Power(W):
792.5 W
Gain:
16.1 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2.3 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.3 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Package:
IB
more info
Description:20 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:3 Watts, 20 Volts, Class A Linear to 1000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
34.77 dBm
Package Type:
Screw Mount, Flanged
Power(W):
3 W
Supply Voltage:
20 V
Package:
55FT-2
more info
Description:40 dBm, GaN SiC HEMT Transistor from DC to 25 GHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 25 GHz
Power:
40 dBm
Package Type:
Die
Power(W):
10 W
Gain:
16 dB
Supply Voltage:
12 to 29.5 V
Package:
0.98 x 0.55 x 0.10 mm
more info

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