RF Transistors - Page 133

2360 RF Transistors from 26 Manufacturers meet your specification.
MMRF1304GN Image
Description:Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270G--2 PLASTIC
more info
Description:1025 to 1150 MHz, 16.85 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
56.99 to 58.99 dBm
Package Type:
Flanged
Power(W):
792.5 W
Gain:
16.1 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 9.2 to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9.2 to 10 GHz
Power:
551 dBm
Package Type:
Flanged
Power(W):
100 to 125.89 W
Gain:
10 to 11.5 dB
Supply Voltage:
24 V
more info
Description:150 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
150 W
more info
Description:50 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
46.98 dBm
Package Type:
Pallet
Power(W):
50 W
Supply Voltage:
50 V
more info
Description:Discrete 180-micron pHEMT transistor which operates from DC to 20 GHz
Application Industry:
Aerospace & Defence, Test & Measurement
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Power:
22 dBm
Package Type:
Die
Power(W):
0.16 W
Gain:
14 dB
Supply Voltage:
8 Vdc
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:55 W LDMOS Power Transistor from 5 to 520 MHz for LMR Applications
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 520 MHz
Package Type:
Flanged
Supply Voltage:
12.5 to 14 V
more info
MRF1570FN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 470 MHz, 70 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
470 MHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Supply Voltage:
12.5 V
Package:
CASE 1366A-03, STYLE 1 TO-272-8 PLASTIC
more info
Description:1.030 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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