RF Transistors - Page 136

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 8.5 to 9.6 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
8.5 to 9.6 GHz
Power:
41 to 42 dBm
Package Type:
Flanged
Power(W):
12.59 to 15.85 W
Package:
IA
more info
Description:45 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info
Description:550 Watts - 50 Volts, 300 us, 10% Broad Band 1200 - 1400 MHz\
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
57.4 dBm
Package Type:
Die
Power(W):
549.54 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:70 Watt, RF Power GaN HEMT from 0.5 to 3.5 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
0.5 to 3 GHz
Power:
49.29 to 50.37 dBm
Package Type:
2-Hole Flanged
Power(W):
85 to 109 W
Supply Voltage:
28 V
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
48 V
Package:
SOT539A
more info
MMRF1013H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.19 dBm
Package Type:
Flanged
Power(W):
262.42 W
Supply Voltage:
30 V
Package:
NI--1230H--4S
more info
Description:1030 MHz, 9.7 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
46.02 to 47.52 dBm
Package Type:
Flanged
Power(W):
56.49 W
Gain:
9.7 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:GaAs FET from 5.85 to 6.75 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.85 to 6.75 GHz
Power:
36.5 dBm
Package Type:
Flanged
Power(W):
4.47 W
Package:
IK
more info
Description:15 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
41 dBm
Package Type:
Surface Mount
Power(W):
15 W
more info
Description:4.0 Watts - 20 Volts, Class C Microwave 2300 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2.3 GHz
Power:
36.02 dBm
Package Type:
2-Hole Flanged
Power(W):
4 W
Supply Voltage:
20 V
Package:
55BT-1
more info

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