RF Transistors - Page 137

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:400 W GaN on SiC HEMT from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 2.7 GHz
Power:
56.02 dBm (P3dB)
Package Type:
Flanged
Power(W):
400 W (P3dB)
Gain:
15 dB
Supply Voltage:
48 V
more info
Description:5 W LDMOS Integrated Doherty MMIC from 859 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
859 to 960 MHz
Power:
28 to 37 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
0.63 to 5 W (P3dB)
Supply Voltage:
28 V
more info
MRFE6P3300H Image
Description:Lateral N-Channel RF Power MOSFET, 860 MHz, 300 W, 32 V
Application Industry:
ISM, Broadcast, Wireless Infrastructure, Commercia...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
32 V
Package:
CASE 375G-04, STYLE 1 NI-860C3
more info
Description:2700 to 3100 MHz, 11 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Gain:
11 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 10.7 to 11.7 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
36.5 to 37.5 dBm
Package Type:
Flanged
Power(W):
4.47 to 5.62 W
more info
Description:7 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1500 MHz
Power:
38 dBm
Package Type:
Surface Mount
Power(W):
7 W
more info
Description:15 W, GaN Transistor from 50 to 3500 MHz
Technology:
GaN
CW/Pulse:
CW
Frequency:
50 to 3500 MHz
Power:
41.76 dBm
Package Type:
Ceramic
Power(W):
15 W
Supply Voltage:
50 V
more info
Description:3.3 to 3.7 GHz GaN HEMT for S-Band Radar Systems
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3500 to 3700 MHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
400 W
Gain:
11.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:51.14 dBm (130 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
51.14 dBm
Package Type:
Surface Mount
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
SOT1135A
more info
MRF8P8300HS Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
790 to 820 MHz
Power:
49.82 dBm
Package Type:
Flanged
Power(W):
95.94 W
Supply Voltage:
28 V
Package:
NI--1230--4H
more info

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