RF Transistors - Page 137

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
8.2 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:2000 W LDMOS Power Transistor for the 400 MHz ISM Band
Application Industry:
Radar, Aerospace & Defence, Broadcast, Wireless In...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Power:
60.97 to 63.22 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
1250 to 2100 W
Supply Voltage:
30 to 65 V
more info
MMRF1005H Image
Description:Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.62 to 53.62 dBm
Package Type:
Flanged
Power(W):
230.14 W
Supply Voltage:
50 V
Package:
NI--780H--2L
more info
Description:4400 to 5000 MHz, 13 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
4.4 to 5 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
15.3 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 900 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
900 MHz
Power:
43 to 44.5 dBm
Package Type:
Flanged
Power(W):
19.95 to 28.18 W
Package:
IL
more info
Description:25 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
25 W
more info
Description:280 Watts, 50 Volts, 200 us, 20% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
54.47 to 55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:250 Watts GaN on SiC HEMT from 2490 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
53.98 dBm
Package Type:
Earless Flanged
Power(W):
250 W
Gain:
13.5 to 14 dB
Supply Voltage:
48 V
more info
Description:52.55 dBm (180 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
52.55 dBm
Package Type:
Surface Mount
Power(W):
179.89 W
Supply Voltage:
28 V
Package:
SOT539B
more info
A2T07H310-24S Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 47 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
46.72 dBm
Package Type:
Flanged
Power(W):
46.99 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info

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