RF Transistors - Page 139

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
51.76 dBm
Package Type:
2-Hole Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M174
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:52.55 dBm (180 W), LDMOS Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
51.85 to 52.86 dBm
Package Type:
Surface Mount
Power(W):
193.2 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MRF6VP3450H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Application Industry:
ISM, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.090 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
799.83 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 12.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.5 GHz
Power:
31.5 to 32.5 dBm
Package Type:
Flanged
Power(W):
1.41 to 1.78 W
Package:
MH
more info
Description:175 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
175 W
more info
Description:500 W, GaN on SiC Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.98 dBm
Package Type:
Ceramic
Power(W):
500 W
Supply Voltage:
50 V
more info
Description:500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
Application Industry:
Military, Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
57 to 57.9 dBm
Package Type:
4-Hole Flanged
Power(W):
500 to 616 W
Supply Voltage:
50 V
more info
Description:2-Stage Asymmetrical Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
47.4 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
55 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info

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