RF Transistors - Page 139

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M174
more info
Description:350 W High Power RF LDMOS Transistor from 470 to 860 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
470 to 860 MHz
Power:
55.44 dBm
Package Type:
2-Hole Flanged, Earless Flanged
Power(W):
350 W
Gain:
17.26 to 19.8 dB
Supply Voltage:
50 V
Package:
H-36248-4, H-37248-4
more info
Description:DC to 3.5 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
50 V
Package:
SOT467C
more info
A2T18H160-24S Image
Description:Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
Description:1200 to 1400 MHz, 9 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
37.78 to 39.78 dBm
Package Type:
Flanged
Power(W):
9.51 W
Gain:
9 dB
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:GaAs FET from 3.1 to 3.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.1 to 3.5 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IK
more info
Description:150 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 150 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
150 W
more info
Description:30 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
44.77 dBm
Package Type:
Pallet
Power(W):
30 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:61.46 dBm (1400 W), LDMOS Transistor from 10 to 500 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
61.46 dBm
Package Type:
Surface Mount
Power(W):
1399.59 W
Supply Voltage:
50 V
Package:
SOT539A
more info

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