RF Transistors - Page 135

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:750 W LDMOS Power Transistor for 915 MHz Industrial Applications
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
902 to 928 MHz
Power:
58.75 dBm
Package Type:
Flanged
Power(W):
750 W
Gain:
20 to 21.5 dB
Supply Voltage:
50 V
more info
MRF6VP2600H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 2-500 MHz, 600 W, 50 V
Application Industry:
ISM, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2 to 500 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:1030 to 1190 MHz, 9 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60.41 to 61.91 dBm
Package Type:
Flanged
Power(W):
1552.39 W
Gain:
9 dB
Supply Voltage:
60 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.5 GHz
Power:
39 to 40.5 dBm
Package Type:
Flanged
Power(W):
7.94 to 11.22 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description:15 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
41 dBm
Package Type:
Surface Mount
Power(W):
15 W
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
46.99 to 47.63 dBm
Package Type:
Die
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:40 dBm (10 W), LDMOS Transistor from 3400 to 3600 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.6 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT975C
more info
MW6S010N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
450 MHz to 1.5 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
CASE 1265-09, STYLE 1 TO-270-2 PLASTIC
more info
Description:3.1 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
53.89 to 54.07 dBm
Package Type:
Flanged
Power(W):
255.27 W
Gain:
13.1 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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