RF Transistors - Page 141

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:8 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
8 W
more info
Description:750 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
58.75 dBm
Package Type:
Ceramic
Power(W):
750 W
Supply Voltage:
50 V
more info
Description:250-W, 1200 to 1400-MHz, GaN HEMT for L-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
500 MHz to 1.6 GHz
Power:
54.39 to 55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Supply Voltage:
50 V
more info
Description:48.75 dBm (75 W), LDMOS Transistor from 3400 to 3800 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.8 GHz
Power:
48.75 dBm
Package Type:
Surface Mount
Power(W):
74.99 W
Supply Voltage:
30 V
Package:
SOT1239B
more info
MRF7S24250N Image
Description:RF POWER LDMOS TRANSISTOR, 2450 MHz, 250 W, 32 V
Application Industry:
Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Supply Voltage:
32 V
Package:
OM--780--2L PLASTIC
more info
Description:420 to 450 MHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
420 to 450 MHz
Power:
52.04 dBm
Package Type:
Flanged
Power(W):
159.96 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.6 GHz
Power:
47.5 dBm
Package Type:
Flanged
Power(W):
56.23 W
Supply Voltage:
50 V
more info
Description:RF Power LDMOS Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
40 to 50 VDC
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
55.44 dBm
Package Type:
Die
Power(W):
349.95 W
Supply Voltage:
150 V
Package:
TO-264 [L]
more info
Description:20 MHz to 1.5 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Test...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
20 MHz to 1.5 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
18 dB
Supply Voltage:
28 V
Package:
4mm PQFN-16LD
more info

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