RF Transistors - Page 138

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1030 MHz, 11.1 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
58.2 to 59.7 dBm
Package Type:
Flanged
Power(W):
933.25 W
Gain:
11.1 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 7.1 to 8.5 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure, Br...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.1 to 8.5 GHz
Power:
41.5 to 43 dBm (P5dB)
Package Type:
Surface Mount
Power(W):
14.13 to 19.95 W (P5dB)
Gain:
10 to 12 dB
Supply Voltage:
24 V
more info
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
30 W
more info
Description:1.5 Watts, 20 Volts, Class A Linear to 1000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
31.76 dBm
Package Type:
Screw Mount, Flanged
Power(W):
1.5 W
Supply Voltage:
20 V
Package:
55FT-2
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
60 to 60.79 dBm
Package Type:
Surface Mount
Power(W):
1199.5 W
Supply Voltage:
50 V
Package:
SOT539A
more info
MRFX600H Image
Description:65 V LDMOS Transistor from 1.8 to 400 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 400 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
600 W
Supply Voltage:
65 V
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
29 to 30 dBm
Package Type:
Flanged
Power(W):
0.79 to 1 W
Package:
MH
more info
Description:RF Power LDMOS Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
40 to 50 VDC
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type