RF Transistors - Page 148

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
30 W
more info
Description:3 Watt - 28 Volts, Class C Microwave 2000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 2 GHz
Power:
34.77 dBm
Package Type:
2-Hole Flanged
Power(W):
3 W
Supply Voltage:
28 V
Package:
55BT-1
more info
Description:35 W, 9 to 11 GHz GaN MMIC HEMT for Radar & CW Applications
Application Industry:
Radar, ISM, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
9 to 11 GHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
35 W
Supply Voltage:
28 V
more info
Description:53.62 dBm (230 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
53.6 dBm
Package Type:
Surface Mount
Power(W):
229.09 W
Supply Voltage:
28 V
Package:
SOT1239B
more info
MMRF1023HS Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 66 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
48.2 dBm
Package Type:
Flanged
Power(W):
66.07 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
Description:450 MHz, 11.1 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
450 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
11.1 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
14 dBm
Package Type:
Chip
Power(W):
0 to 0.03 W
Gain:
11 to 13 dB
Supply Voltage:
2 V
more info
Description:200 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
53 dBm
Package Type:
Flanged
Power(W):
200 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
125 V
Package:
T11
more info
Description:15-W, 3300 to 3900-MHz, 28-V, GaN HEMT for WiMAX
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.3 to 3.9 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
50 V
more info

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