RF Transistors - Page 153

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER MOSFET N- CHANNEL PUSH - PULL PAIR
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 150 MHz
Power:
56.53 dBm
Package Type:
Flanged
Power(W):
449.78 W
Supply Voltage:
165 V
Package:
T3A
more info
Description:6 W, RF Power GaN HEMT, Plastic
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.99 to 38.39 dBm
Package Type:
Flanged
Power(W):
6.9 W
Supply Voltage:
28 V
more info
Description:Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
Frequency:
2.3 to 2.7 GHz
Power:
48 to 49.5 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
63 to 89.12 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
A2T26H160-24S Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR, 2496 - 2690 MHz, 28 W AVG, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
Description:L-Band RF Power LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
12.1 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 10.7 to 11.7 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
36.5 to 37.5 dBm
Package Type:
Flanged
Power(W):
4.47 to 5.62 W
more info
Description:135 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
135 W
more info
Description:RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
Package:
M173
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
14 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
MMRF1004N Image
Description:GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.6 to 2.2 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info

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