RF Transistors - Page 153

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 100 MHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Supply Voltage:
125 V
Package:
TO-247CS
more info
NPTB00050B Image
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:56.99 dBm (500 W), LDMOS Transistor from 960 to 1215 MHz
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.53 dBm
Package Type:
Surface Mount
Power(W):
449.78 W
Supply Voltage:
50 V
Package:
SOT634A
more info
MHT1108N Image
Description:2450 MHz RF LDMOS Transistor for Consumer and Commercial Cooking
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
40.97 dBm
Package Type:
Surface Mount
Power(W):
12.5 W
Supply Voltage:
28 V
Package:
DFN 4 × 6 PLASTIC
more info
Description:GaN on SiC Transistor X-Band Radars from 11 to 12 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
10.8 to 11.8 GHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
90 W
Gain:
11 dB
Supply Voltage:
50 V
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
40.5 dBm
Package Type:
Flanged
Power(W):
11.22 W
Supply Voltage:
50 V
more info
Description:35 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info
Description:RF POWER MOSFET N- CHANNEL PUSH - PULL PAIR
Application Industry:
ISM
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 100 MHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
399.94 W
Supply Voltage:
150 V
Package:
T3C
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
3 to 200 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
MMRF1018NB Image
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
TO--272WB--4 PLASTIC
more info

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