RF Transistors - Page 151

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:15 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
28 V
more info
Description:47.78 dBm (60 W), LDMOS Transistor from 2300 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.69 GHz
Power:
46.23 to 46.99 dBm
Package Type:
Surface Mount
Power(W):
50 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MRF8S9100HS Image
Description:GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.57 dBm
Package Type:
Flanged
Power(W):
71.94 W
Supply Voltage:
28 V
Package:
CASE 465--06, STYLE 1 NI--780
more info
Description:1030 to 1090 MHz, 10.4 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Gain:
10.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from DC to 2.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 2.7 GHz
Power:
43 dBm
Package Type:
Surface Mount
Power(W):
19.95 W
Supply Voltage:
50 V
more info
Description:8 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
GaN on SiC, GaN
Frequency:
1 to 1000 MHz
Power:
39 dBm
Package Type:
Surface Mount
Power(W):
8 W
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 500 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:DC to 3.5 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
50 V
Package:
SOT467C
more info
MRF8P8300HS Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
790 to 820 MHz
Power:
49.82 dBm
Package Type:
Flanged
Power(W):
95.94 W
Supply Voltage:
28 V
Package:
NI--1230--4H
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type