RF Transistors - Page 151

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
7.8 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1239B
more info
MRF1550N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 50 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
175 MHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
12.5 V
Package:
CASE 1264-10, STYLE 1 TO-272-6 WRAP PLASTIC
more info
Description:1030 MHz, 15.5 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 GHz
Power:
59.78 to 61.78 dBm
Package Type:
Flanged
Power(W):
1506.61 W
Gain:
15.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 13.75 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
13.75 to 14.5 GHz
Power:
42 to 42.5 dBm
Package Type:
Flanged
Power(W):
15.85 to 17.78 W
Supply Voltage:
10 V
more info
Description:4 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 850 MHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
46.99 to 47.63 dBm
Package Type:
Die
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:80 W GaN-on-SiC HEMT from 7.9 to 8.4 GHz
Application Industry:
Broadcast, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.9 to 8.4 GHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
31.6 W
Gain:
14.6 to 17 dB
Package:
Flange Ceramic / Metal
more info
Description:600 W GaN Doherty Power Transistor from 700 to 1000 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
700 to 1000 MHz
Package Type:
Surface Mount
Supply Voltage:
48 to 52 V
more info
MRFE6S9060N Image
Description:Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
Application Industry:
Wireless Infrastructure, Commercial, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 960 MHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Supply Voltage:
28 V
Package:
CASE 1265-09, STYLE 1 TO-270-2 PLASTIC
more info

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