RF Transistors - Page 144

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
6.6 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 1805 to 2025 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.025 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
Description:N--Channel Enhancement--Mode Lateral MOSFETs
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2110 to 2170 MHz
Power:
47.99 dBm
Package Type:
Chip
Power(W):
63 W
Gain:
16.4 to 16.5 dB
Supply Voltage:
48 V
more info
Description:5200 to 5900 MHz, 13 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
12.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 3.1 to 3.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.1 to 3.5 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IK
more info
Description:4 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 850 MHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.46 dBm
Package Type:
Die
Power(W):
139.96 W
Supply Voltage:
150 V
Package:
TO-247CS
more info
Description:250 W GaN HEMT Transistor from DC to 2 GHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
54.1 to 54.8 dBm
Package Type:
Flanged
Power(W):
257 to 302 Watts
Supply Voltage:
50 V
more info
Description:48.75 dBm (75 W), LDMOS Transistor from 10 to 600 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 to 600 MHz
Power:
48.75 dBm
Package Type:
Surface Mount
Power(W):
74.99 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info
MMRF1316N Image
Description:WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info

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