RF Transistors - Page 147

2357 RF Transistors from 26 Manufacturers meet your specification.
MRF8S9220HS Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 65 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Supply Voltage:
28 V
Package:
CASE 465A-06, STYLE 1 NI-780S
more info
Description:5200 to 5900 MHz, 14 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
12 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 5.85 to 6.75 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure, Br...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
5.85 to 6.75 GHz
Power:
49.5 to 50.5 dBm
Package Type:
Flanged
Power(W):
89.13 to 112.2 W
Gain:
12.5 to 13.5 dB
Supply Voltage:
24 V
more info
Description:125 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 150 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
125 W
more info
Description:700 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
58.45 dBm
Package Type:
Ceramic
Power(W):
700 W
Supply Voltage:
50 V
more info
Description:45 Watt RF Power GaN HEMT from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 4 GHz
Power:
46.02 to 47.4 dBm
Package Type:
Flanged
Power(W):
40 to 55 W
Supply Voltage:
28 V
more info
Description:56.02 dBm (400 W), LDMOS Transistor from 1805 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
28 V
Package:
SOT1242B
more info
A2G22S190-01S Image
Description:36 W Doherty RF Power GaN Transistor from 1800 to 2200 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
45.56 dBm
Package Type:
Flanged
Power(W):
36 W
Supply Voltage:
0 to 55 Vdc
Package:
NI-400S-2S
more info
Description:3100 to 3500 MHz, 10.4 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
10.4 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 9.2 to 10.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9.2 to 10.5 GHz
Power:
51.5 to 53.5 dBm
Package Type:
Flanged
Power(W):
141.25 to 223.87 W
Gain:
7.5 to 9.5 dB
Supply Voltage:
50 V
more info

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