RF Transistors - Page 147

2360 RF Transistors from 26 Manufacturers meet your specification.
A2T18H455W23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 1805-1880 MHz, 87 W AVG., 31.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
49.4 dBm
Package Type:
Flanged
Power(W):
87.1 W
Supply Voltage:
31.5 V
Package:
OM--1230--4L2S PLASTIC
more info
Description:1030 to 1090 MHz, 12.2 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
52.79 dBm
Package Type:
Flanged
Power(W):
190.11 W
Gain:
12.2 dB
Supply Voltage:
60 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 5.2 to 5.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.4 GHz
Power:
44 to 45.5 dBm
Package Type:
Flanged
Power(W):
25.12 to 35.48 W
Gain:
15 to 16.5 dB
Supply Voltage:
24 V
more info
Description:10 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
44.77 dBm
Package Type:
2-Hole Flanged
Power(W):
29.99 W
Supply Voltage:
28 V
Package:
M113
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
35.56 dBm
Package Type:
Flanged
Power(W):
3.6 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:49.03 dBm (80 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Supply Voltage:
28 V
Package:
SOT1212-2
more info
A2V07H400-04N Image
Description:107 W LDMOS Power Transistor from 420 to 851 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
Frequency:
420 to 692 MHz
Power:
57.3 dBm (3dB)
Package Type:
Flanged
Power(W):
537 W (3dB)
Supply Voltage:
0 to 55 V
more info
IGN1214M3200 Image
Description:1.5 kW, GaN RF Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1.2 to 1.4 GHz
Power:
61.76 dBm
Package Type:
2-Hole Flanged
Power(W):
1.5 kW
Supply Voltage:
75 V
more info
Description:GaAs FET from 6.4 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 GHz
Power:
32.5 to 34 dBm
Package Type:
Flanged
Power(W):
1.78 to 2.51 W
Package:
MH
more info

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