RF Transistors - Page 145

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:2700 to 2900 MHz, 9.5 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
52.3 to 53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
9.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 7.2 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 7.2 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IA
more info
Description:100 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.46 dBm
Package Type:
Die
Power(W):
139.96 W
Supply Voltage:
250 V
Package:
TO-247CS
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
225 to 400 MHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
7.8 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:47.78 dBm (60 W), LDMOS Transistor from 2300 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.69 GHz
Power:
46.23 to 46.99 dBm
Package Type:
Surface Mount
Power(W):
50 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
AFT09MS031N Image
Description:Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 941 MHz
Power:
44.91 dBm
Package Type:
Flanged
Power(W):
30.97 W
Supply Voltage:
13.6 V
Package:
TO--270--2 PLASTIC
more info
Description:5200 to 5900 MHz, 13 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Gain:
13.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
34 to 35 dBm
Package Type:
Flanged
Power(W):
2.51 to 3.16 W
more info
Description:160 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 2.5 GHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
160 W
more info

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