RF Transistors - Page 145

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1.03 to 1.09 GHz, LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
50.41 to 51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
15.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.7 to 2.9 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
53.97 to 55.05 dBm
Package Type:
Flanged
Power(W):
250 to 320 W
Supply Voltage:
50 V
more info
Description:125 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
125 W
more info
Description:0.5 Watts, 20 Volts, Class A Linear to 2000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2 GHz
Power:
26.9 to 29.03 dBm
Package Type:
Screw Mount
Power(W):
0.49 W
Supply Voltage:
20 V
Package:
55ET-2
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 30 MHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
22 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:43.98 dBm (25 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
43.98 dBm
Package Type:
Surface Mount
Power(W):
25 W
Supply Voltage:
50 V
Package:
SOT467C
more info
A2I20H060GN Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
TO--270WBG--15 PLASTIC
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Gain:
12.5 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
39 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.94 to 8.91 W
Package:
IB
more info
Description:7 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1500 MHz
Power:
38 dBm
Package Type:
Surface Mount
Power(W):
7 W
more info

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