RF Transistors - Page 149

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:400 Watt LDMOS Power Transistor from 3.1 GHz to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3100 to 3500 MHz
Power:
56.28 dBm
Package Type:
Chip
Power(W):
425 W
Gain:
12 dB
Supply Voltage:
32 V
more info
MRF8S9220HS Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 65 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Supply Voltage:
28 V
Package:
CASE 465A-06, STYLE 1 NI-780S
more info
Description:GaN on SiC 50W Transistor for C-Band Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
50 V
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IB
more info
Description:100 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 470 MHz
Power:
34.77 dBm
Package Type:
Through Hole
Power(W):
3 W
Supply Voltage:
12.5 V
Package:
TO-39
more info
Description:30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
VHF to 3 GHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
50 V
more info
Description:20 W LDMOS Power Transistor from 400 MHz to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 MHz to 2.7 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
28 V
Package:
SOT1483-1
more info
A2T09VD300N Image
Description:Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
48.98 dBm
Package Type:
Flanged
Power(W):
79.07 W
Supply Voltage:
48 V
Package:
TO--270WB--6A PLASTIC
more info
Description:3100 to 3500 MHz, 10 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
9.9 dB
Supply Voltage:
28 V
Package:
Ceramic
more info

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