RF Transistors - Page 146

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:3 Watts, 20 Volts, Class A Linear to 1000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
34.77 dBm
Package Type:
Screw Mount, Flanged
Power(W):
3 W
Supply Voltage:
20 V
Package:
55FT-2
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description:40 dBm (10 W), LDMOS Transistor from 700 to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 2.7 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT1371-1
more info
MRF6V2010NB Image
Description:VHV6 10W TO272-2
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 450 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
50 Vdc
Package:
TO--270--2 PLASTIC
more info
Description:653 to 687 MHz, Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
653 to 687 MHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
9.3 dB
Supply Voltage:
50 V
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IA
more info
Description:8 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
8 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 100 MHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Supply Voltage:
125 V
Package:
TO-247CS
more info
Description:60-W, 2700 to 3500-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
48.7 dBm
Package Type:
Surface Mount
Power(W):
74.13 W
Supply Voltage:
50 V
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
28 V
Package:
SOT502A
more info

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