RF Transistors - Page 146

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:300 W, GaN Transistor from 2700 to 2900 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
2700 to 2900 MHz
Power:
54.77 dBm
Package Type:
Pallet
Power(W):
300 W
Supply Voltage:
50 V
more info
Description:1400 W GaN on Sic HEMT from 960 to 1215 MHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
960 to 1215 MHz
Power:
61.46 dBm
Package Type:
Flanged
Power(W):
1400 W
Gain:
17 dB
Supply Voltage:
50 V
more info
Description:50 dBm (100 W), LDMOS Transistor from 1 to 1000 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 1 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
40 V
Package:
SOT467C
more info
MMRF1017N Image
Description:RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 28 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Supply Voltage:
28 V
Package:
OM--780--2L PLASTIC
more info
Description:1.03 GHz GaN-on-SiC Power Transistor for Avionics Applications
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1030 MHz
Power:
65.56 dBm
Package Type:
2-Hole Flanged
Power(W):
3600 W
Gain:
18 to 22 dB
Supply Voltage:
100 V
more info
Description:GaAs FET from 2.3 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.3 GHz
Power:
28.5 to 29.5 dBm
Package Type:
Flanged
Power(W):
0.71 to 0.89 W
Package:
ME
more info
Description:250 W LDMOS Power Transistor from 1 to 1300 MHz
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.3 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Supply Voltage:
28 VDC
more info
Description:RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
450 to 512 MHz
Power:
33.01 to 36.02 dBm
Package Type:
Through Hole
Power(W):
4 W
Supply Voltage:
12.5 V
Package:
TO-39
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:3-Stage LDMOS Integrated Doherty MMIC from 3400 to 3800 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3400 to 3800 MHz
Power:
45 to 45.5 dBm (3dB)
Package Type:
Surface Mount
Power(W):
31.62 to 35.48 W
Supply Voltage:
26 V
Package:
PQFN20
more info

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