RF Transistors - Page 156

2357 RF Transistors from 26 Manufacturers meet your specification.
A2T23H160-24S Image
Description:Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 28 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
Description:1.03 GHz, LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 GHz
Power:
60 to 61.14 dBm
Package Type:
Flanged
Power(W):
1300.17 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
31.5 to 32.5 dBm
Package Type:
Surface Mount
Power(W):
1.41 to 1.78 W
Package:
XM
more info
Description:80 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
80 W
more info
Description:50 W, GaN on SiC Transistor from 1000 to 14000 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1000 to 14000 MHz
Power:
46.98 dBm
Package Type:
Die
Power(W):
50 W
Supply Voltage:
28 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:500 W GaN Asymmetric Doherty Power Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2110 to 2170 MHz
Power:
57 dBm
Package Type:
Flanged
Power(W):
500 W
more info
A5G26H110N Image
Description:15 W Asymmetrical Doherty Power GaN Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2496 to 2690 MHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Supply Voltage:
48 V
Package:
DFN
more info
Description:1450 to 1550 MHz, 8.28 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.45 to 1.55 GHz
Power:
58.13 dBm
Package Type:
Flanged
Power(W):
650.13 W
Gain:
8.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
158.49 W
Supply Voltage:
50 V
more info

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