RF Transistors - Page 155

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 150 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M174
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
28 V
Package:
SOT539A
more info
MMRF1315N Image
Description:Broadband RF Power LDMOS Transistor, 500-1000 MHz, 60 W CW, 28 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
500 MHz to 1 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info
IGN1030S3100 Image
Description:3.1 kW, GaN RF Transistor from 1 to 2 GHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1 to 2 GHz
Power:
64.91 dBm
Package Type:
2-Hole Flanged
Power(W):
3.1 kW
Supply Voltage:
75 V
more info
Description:GaAs FET from 2 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
34.5 to 35.5 dBm
Package Type:
Surface Mount
Power(W):
2.82 to 3.55 W
Package:
XM
more info
Description:60 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
60 W
more info
Description:RF POWER MOSFET N- CHANNEL PUSH - PULL PAIR
Application Industry:
ISM
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 100 MHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
399.94 W
Supply Voltage:
150 V
Package:
T3C
more info
Description:10 W Surface-Mount GaN HEMT from DC to 8 GHz
Application Industry:
Test & Measurement, Broadcast, Wireless Infrastruc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Package Type:
Flanged
Supply Voltage:
28 V
more info
Description:200 W Power LDMOS Transistor for ISM Applications
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT502A
more info

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