RF Transistors - Page 155

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
125 V
Package:
TO-247CS
more info
Description:30 W, GaN HEMT from DC to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
44.77 to 45.44 dBm
Package Type:
Surface Mount
Power(W):
34.99 W
Supply Voltage:
50 V
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT1251-3
more info
MMRF1008H Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.39 dBm
Package Type:
Flanged
Power(W):
27.48 W
Supply Voltage:
50 V
Package:
NI--780H--2L
more info
Description:2200 to 2260 MHz, 10 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.25 to 2.55 GHz
Power:
41.76 to 44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
10 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 8.5 to 9.6 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
8.5 to 9.6 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
Package:
IA
more info
Description:10 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:RF POWER MOSFET FULL-BRIDGE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 40 MHz
Power:
58.75 dBm
Package Type:
Die
Power(W):
749.89 W
Supply Voltage:
380 V
Package:
T1
more info
Description:520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
925 to 960 MHz
Power:
57.16 dBm (P3dB)
Package Type:
Earless Flanged
Power(W):
520 W (P3dB)
Supply Voltage:
48 V
Package:
PG-HB2SOF-6-1
more info
Description:DC to 3.5 GHz, Broadband RF power GaN HEMT
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
SOT1228A
more info

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